HUR60100, hur60120 symbol test conditions maximum ratings unit i frms i favm t c =90 o c; rectangular, d=0.5 70 60 a t vj t vjm t stg -55...+175 175 -55...+150 o c i fsm t vj =45 o c; t p =10ms (50hz), sine e as t vj =25 o c; non-repetitive; i as =14.5a; l=180uh v a =1.25 . v r typ.; f=10khz; repetitive 500 23 1.5 a mj i ar a p tot t c =25 o c m d mounting torque typical 230 0.8...1.2 6 w nm weight g HUR60100 hur60120 v rsm v 1000 1200 v rrm v 1000 1200 dimensions to-247ac a=anode, c=cathode, tab=cathode c a dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 soft recovery behaviour high-performance wide temperature range ultra fast recovery epitaxial diodes c a c(tab) p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
HUR60100, hur60120 advantages * avalanche voltage rated for reliable operation * soft reverse recovery for low emi/rfi * low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch applications * antiparallel diode for high frequency switching devices * antisaturation diode * snubber diode * free wheeling diode in converters and motor control circuits * rectifiers in switch mode power supplies (smps) * inductive heating * uninterruptible power supplies (ups) * ultrasonic cleaners and welders features * international standard package * glass passivated chips * very short recovery time * extremely low switching losses * low i rm -values * soft recovery behaviour symbol test conditions characteristic values typ. max. unit t vj =25 o c; v r =v rrm t vj =150 o c; v r =v rrm 650 2.5 ua ma i r r thjc r thch 0.65 k/w t rr i f =1a; -di/dt=300a/us; v r =30v; t vj =25 o c ns i rm v r =100v; i f =130a; -di f /dt=100a/us; t vj =100 o c 14.3 a i f =60a; t vj =150 o c t vj =25 o c 1.74 2.66 v v f 0.25 40 7 soft recovery behaviour high-performance wide temperature range ultra fast recovery epitaxial diodes * rohs complian t p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
HUR60100, hur60120 200 600 1000 0 400 800 160 200 240 280 0. 0001 0. 001 0. 01 0. 1 1 10 0. 01 0. 1 1 0 4 0 8 0 120 160 0. 0 0. 5 1. 0 1. 5 2. 0 k f t vj c -d i f /d t t s k/w 0 200 400 600 800 1000 0 40 80 120 0. 0 0. 4 0. 8 1. 2 v fr di f /d t v 200 600 1000 0 400 800 0 20 40 60 80 100 100 1000 0 2 4 6 8 10 01 23 0 20 40 60 80 100 i rm q r i f a v f -d i f /d t -di f /d t a/ us a v c a/ us a/ us t rr ns t fr a/ us ? us z th jc i f = 120a i f = 60a i f = 30a t vj = 100 c v r = 600v t vj = 100 c i f = 60a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj = 100 c v r = 600v t vj = 100 c v r = 600v i f = 120a i f = 60a i f = 30a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f = 120a i f = 60a i f = 30a t fr v fr fig. 7 transient thermal resistance junction to case t vj =150 c t vj =100 c t vj = 25 c constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.324 0.0052 2 0.125 0.0003 3 0.201 0.038 soft recovery behaviour high-performance wide temperature range ultra fast recovery epitaxial diodes p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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